MOS-GATE TECHNOLOGY ON GAAS AND OTHER III-V COMPOUNDS.HARTNAGEL HL.1976; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1976; VOL. 13; NO 4; PP. 860-867; BIBL. 17 REF.; (PHYS. COMPD. SEMICOND. INTERFACES. ANNU. CONF. 3. PROC; SAN DIEGO, CALIF.; 1976)Conference Paper

PULSE COMMUNICATION AT MICROWARE BIT RATES USING GUNN DOMAINSHARTNAGEL HL.1972; ACTA ELECTRON.; FR.; DA. 1972; VOL. 15; NO 3; PP. 217-232; ABS. FR. ALLEM.; BIBL. 21 REF.Serial Issue

INTERMODULATION DISTORTION OF MESFET AMPLIFIERS = LA DISTORSION D'INTERMODULATION D'AMPLIFICATEURS A BARRIERE SCHOTTKYHARTNAGEL HL.1982; AEUE, ARCH. ELEKTRON. UEBERTRAGUNGSTECH.; ISSN 0001-1096; DEU; DA. 1982; VOL. 36; NO 2; PP. 83-85; ABS. GER; BIBL. 2 REF.Article

NEW GALLIUM ARSENIDE OXIDATION TECHNIQUE FOR MICROWAVE INTEGRATED CIRCUITS.HARTNAGEL HL.1978; MICROELECTRONICS; G.B.; DA. 1978; VOL. 8; NO 4; PP. 5-9; BIBL. 10 REF.Article

THIN FILMS ON GALLIUM ARSENIDE.HARTNAGEL HL.1976; ELECTRON. AND POWER; G.B.; DA. 1976; VOL. 22; NO 11-12; PP. 765-767; BIBL. 5 REF.Article

PLANE-WAVE INTERACTION WITH STRUCTURES OF THIN ABSORBING FILMSHARTNAGEL HL.1980; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1980; VOL. 28; NO 6; PP. 667-669; BIBL. 4 REF.Article

BROAD-BAND MESFET GAIN BY A SYNTHESIS DESIGN PROCEDUREHARTNAGEL HL.1979; INTERNATION. J. ELECTRON.; GBR; DA. 1979; VOL. 47; NO 6; PP. 565-567; BIBL. 5 REF.Article

ELECTROLYTIC OXIDATION OF SEMICONDUCTOR SURFACES.HARTNAGEL HL.1977; ELECTROCOMPON. SCI. TECHNOL.; G.B.; DA. 1977; VOL. 3; NO 4; PP. 225-231; BIBL. 13 REF.Article

PULSED-LASER ILLUMINATION OF GAAS MOS STRUCTURES TO STUDY CHARGE TRAPPINGALAM MS; HARTNAGEL HL.1982; INT. J. ELECTRON. THEOR. EXP.; ISSN 0020-7217; GBR; DA. 1982; VOL. 52; NO 1; PP. 61-75; BIBL. 7 REF.Article

ANODIC OXIDES ON GAAS: IV THIN ANODIC OXIDES ON GAASBAYRAKTAROGLU B; HARTNAGEL HL.1979; INTERNATION. J. ELECTRON.; GBR; DA. 1979; VOL. 46; NO 1; PP. 1-11; BIBL. 7 REF.Article

PERFORMANCE OF A NOVEL DIELECTRIC WAVEGUIDE SYSTEM FOR MICROWAVE POWER UTILISATION BY DIVERS.PAVLIDIS D; HARTNAGEL HL.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 8; PP. 262-264; BIBL. 5 REF.Article

ANODIC OXIDES ON GAAS I. ANODIC NATIVE OXIDES ON GAASBAYRAKTAROGLU B; HARTNAGEL HL.1978; INTERNATION. J. ELECTRON.; GBR; DA. 1978; VOL. 45; NO 4; PP. 337-352; BIBL. 22 REF.Article

EXPERIMENTAL RESULTS ON GAAS SURFACE CONDITIONS AFFECTING OHMIC CONTACT PROPERTIES.PARIA H; HARTNAGEL HL.1976; INDIAN J. PHYS.; INDIA; DA. 1976; VOL. 50; NO 4; PP. 488-494; BIBL. 4 REF.Article

THE STRUCTURE OF CLEANED AND POLISHED (100) GAAS SURFACES.WEISS BL; HARTNAGEL HL.1976; INTERNATION. J. ELECTRON.; G.B.; DA. 1976; VOL. 41; NO 2; PP. 185-188; BIBL. 2 REF.Article

NEW GUNN-EFFECT THREE-TERMINAL PLUSE REGENERATOR BY PLANAR PHOTOLITHOGRAPHY.HARIU T; HARTNAGEL HL.1974; INTERNATION. J. ELECTRON.; G.B.; DA. 1974; VOL. 37; NO 4; PP. 451-455; BIBL. 3 REF.Article

EXPERIMENTAL DATA ON LIGHT EMISSION BEHAVIOUR FROM GAAS SCHOTTKY CONTACTSADACHI H; HARTNAGEL HL.1982; INT. J. ELECTRON. THEOR. EXP.; ISSN 0020-7217; GBR; DA. 1982; VOL. 52; NO 1; PP. 89-93; BIBL. 4 REF.Article

LOW TEMPERATURE DOUBLE-PLASMA PROCESS FOR BN FILMS ON SEMICONDUCTORSSCHMOLLA W; HARTNAGEL HL.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2636-2637; BIBL. 4 REF.Article

OHMIC CONTACTS TO INPMILLS HT; HARTNAGEL HL.1979; INTERNATION. J. ELECTRON.; GBR; DA. 1979; VOL. 46; NO 1; PP. 65-73; BIBL. 8 REF.; INPArticle

A THREE-TERMINAL GUNN-EFFECT DEVICE STRUCTURE FOR INCREASED OUTPUT POWER LEVELS.HERRON L; HARTNAGEL HL.1976; INTERNATION. J. ELECTRON.; G.B.; DA. 1976; VOL. 40; NO 3; PP. 251-255; BIBL. 4 REF.Article

AN UNDERSTANDING OF OHMIC CONTACT FORMATION WITH GE DOPING OF N-GAAS.JAROS M; HARTNAGEL HL.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 11; PP. 1029-1030; BIBL. 9 REF.Article

AN ASSESSMENT OF THE QUALITY OF ANODIC NATIVE OXIDES OF GAAS FOR MOS DEVICESBREEZE PA; HARTNAGEL HL.1979; THIN SOLID FILMS; NLD; DA. 1979; VOL. 56; NO 1-2; PP. 51-61; BIBL. 34 REF.Article

ANODIC OXIDES ON GAAS. II. ANODIC AL 203 AND COMPOSITE OXIDES ON GAASBAYRAKTAROGLU B; HARTNAGEL HL.1978; INT. J. ELECTRON.; GBR; DA. 1978; VOL. 45; NO 5; PP. 449-463; BIBL. 15 REF.Article

CIRCUIT OPTIMIZATION OF J-BAND (13-17GHZ) COAXIAL GUNN OSCILLATORS WITH INCREASED ELECTRONIC TUNING WITHOUT NOISE PERFORMANCE DETERIORATION.PAULIDIS D; HARTNAGEL HL.1977; ARCH. ELEKTRON. UEBERTRAG.-TECH.; DTSCH.; DA. 1977; VOL. 31; NO 4; PP. 157-162; ABS. ALLEM.; BIBL. 12 REF.Article

STUDIES OF N-TYPE GAAS MATERIAL PROPERTIES BY ANODIC CURRENT BEHAVIOUR.COLQUHOUN AS; HARTNAGEL HL.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 10; PP. 819-826; BIBL. 6 REF.Article

NN⁺ JUNCTIONS AND GUNN DOMAINS IN MICROWAVE DEVICESJAIN SC; HARTNAGEL HL.1982; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1982; VOL. 52; NO 6; PP. 605-607; BIBL. 6 REF.Article